Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Very recently, we reported a novel doping method called plasma doping without any external bias (PDWOEB) for the introduction of some impurities into Si and GaN at room temperature (RT). In this work, the RT doping of some impurities, including B, Mg, Ni, Cu, Mn, Cr and Fe, into SiC with ultra-shall...

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Bibliographic Details
Published in:Journal of materials engineering and performance 2019-01, Vol.28 (1), p.162-168
Main Authors: Hou, Ruixiang, Li, Lei, Fang, Xin, Zhao, Hui, Chen, Yihang, Xie, Ziang, Sun, Guosheng, Zhang, Xinhe, Zhao, Yanfei, Huang, Rong, Huang, Zengli, He, Youqin, Ma, Nongnong, Zhang, Jicai, Xu, Wanjing, Yang, Jinbo, Xiao, Chijie, Qin, G. G.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
COPPER
Corrosion and Coatings
DOPED MATERIALS
Engineering Design
GALLIUM NITRIDES
IMPURITIES
IRON
MATERIALS SCIENCE
PLASMA
Quality Control
Reliability
Safety and Risk
SILICON CARBIDES
Tribology
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Summary:Very recently, we reported a novel doping method called plasma doping without any external bias (PDWOEB) for the introduction of some impurities into Si and GaN at room temperature (RT). In this work, the RT doping of some impurities, including B, Mg, Ni, Cu, Mn, Cr and Fe, into SiC with ultra-shallow depths of tens of nanometer and very high surface concentrations, approaching or exceeding 1E20/cm 3 , by using PDWOEB is reported. It has been found for the first time that the doping depths and surface concentrations of these impurities doped into SiC by the PDWOEB increase drastically with increasing doping time and the ferromagnetism of SiC due to Ni doping is demonstrated. Moreover, the approximate diffusivities of B, Mg, Ni, Cu, Mn, Cr and Fe in SiC at RT under plasma stimulation are obtained. The physical mechanism of PDWOEB is further discussed, and some unclear viewpoints are clarified.
ISSN:1059-9495
1544-1024
DOI:10.1007/s11665-018-3782-z