Superluminescent diodes of the 770 - 790-nm range based on semiconductor nanostructures with narrow quantum wells

Comparative experimental study of superluminescent diodes (SLDs) with active layers containing one, two, or three 5.0-nm-wide quantum wells symmetrically positioned in the waveguide layer is performed. It is shown that an increase in the number of quantum wells leads to narrowing of the superlumines...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2019-09, Vol.49 (9), p.810-813
Main Authors: Anikeev, A.S., Bagaev, T.A., Il'chenko, S.N., Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Pankratov, K.M., Shidlovskii, V.R., Yakubovich, S.D.
Format: Article
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIODE TUBES
LAYERS
LUMINESCENCE
POLARIZATION
PUMPING
QUANTUM WELLS
quantum-well superluminescent diode
SEMICONDUCTOR MATERIALS
semiconductor nanoheterostructure
SPECTRA
Superluminescent diodes
WAVEGUIDES
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Summary:Comparative experimental study of superluminescent diodes (SLDs) with active layers containing one, two, or three 5.0-nm-wide quantum wells symmetrically positioned in the waveguide layer is performed. It is shown that an increase in the number of quantum wells leads to narrowing of the superluminescence spectrum and weakens the dependence of its width on the pump level. Simultaneously, the degree of polarisation of the output radiation noticeably increases. For example, rather reliable high-power narrow-band SLDs with a spectral halfwidth smaller than 8 nm and polarisation ratio TE/TM exceeding 20 dB are developed.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL17051