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Multiparametric AFM insights into electron transport mechanisms in biomemristors

Biomemristors have attracted significant attention due to their applications in biodegradable and flexible electronic devices, and their prospective functions in information storage, neural synapses, and neuromorphic computation. Hence, understanding biomaterials' resistive switching (RS) mecha...

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Bibliographic Details
Published in:Materials today physics 2024-05, Vol.44 (C), p.101429, Article 101429
Main Authors: Shi, Chenyang, Heble, Annie Y., Zhang, Shuai
Format: Article
Language:English
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Summary:Biomemristors have attracted significant attention due to their applications in biodegradable and flexible electronic devices, and their prospective functions in information storage, neural synapses, and neuromorphic computation. Hence, understanding biomaterials' resistive switching (RS) mechanism is essential to design novel biomemristors with enhanced performance. In the last decade, various atomic force microscopy (AFM) modes, such as Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (cAFM), in situ/operando visualize the electron transport behaviors within biomemristors at the nanoscale. This review provides a comprehensive discussion of multiparametric AFM techniques to characterize biomemristors and inspire new ideas in developing next-generation consumer electronics. We also summarize the progress of revealing the internal mechanism of biomemristors with functional AFM to visualize and understand the switching behavior. Finally, the opportunities and challenges of further utilizing multiparametric AFM to explore the electron transport mechanisms in biomemristors are presented. This review provides a comprehensive discussion of multiparametric AFM techniques to characterize biomemristors and inspire new ideas in developing next-generation consumer electronics. [Display omitted] •The development of AFM techniques in analyzing the electron transport mechanisms of biomemristors is summarized.•The development of intelligent biomemristors and their various switching behaviors are briefly introduced.•The challenges and prospects for further development of AFM techniques in biomemristors are presented and discussed.
ISSN:2542-5293
2542-5293
DOI:10.1016/j.mtphys.2024.101429