Alkali element (Li, Na, K, and Rb) doping of Cu2BaGe1−xSnxSe4 films

Cu2BaGe1−xSnxSe4 (CBGTSe) represents an exemplary system within the I2–II–IV–X4 (I = Ag, Cu; II = Sr, Ba; IV = Ge, Sn; X = S, Se) family, which has been introduced to target suppressing the formation of anti-site defects and associated defect clusters within the analogous kesterite Cu2ZnSn(S,Se)4. P...

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Bibliographic Details
Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-06, Vol.11 (28), p.15336-15346
Main Authors: Kim, Yongshin, Hempel, Hannes, Harvey, Steven P, Rivera, Nelson A, Unold, Thomas, Mitzi, David B
Format: Article
Language:English
Subjects:
Alkali doping
Carrier density
Carrier mobility
CBGTSe
Chalcogenide
Crystal defects
Cu2BaGe1-xSnxSe4
Dopants
Doped films
Doping
Germanium
Grain size
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Lithium
Minority carriers
Multinary chalcogenide
Optoelectronic devices
Photovoltaics
Rubidium
Semiconductor
Solar cell
Thin-film
Tin
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Summary:Cu2BaGe1−xSnxSe4 (CBGTSe) represents an exemplary system within the I2–II–IV–X4 (I = Ag, Cu; II = Sr, Ba; IV = Ge, Sn; X = S, Se) family, which has been introduced to target suppressing the formation of anti-site defects and associated defect clusters within the analogous kesterite Cu2ZnSn(S,Se)4. Previous studies on CBGTSe films showed relatively low hole carrier densities (
ISSN:2050-7488
2050-7496
DOI:10.1039/d3ta01494k