Gate-Controlled Anyon Generation and Detection in Kitaev Spin Liquids

• Published in: Physical review letters 2024-05, Vol.132 (20), p.206501-206501, Article 206501
• Main Author: Halász, Gábor B
• Format: Article
• Language: English
• ISSN: 0031-9007; 1079-7114
• DOI: 10.1103/PhysRevLett.132.206501

Reliable manipulation of non-Abelian Ising anyons supported by Kitaev spin liquids may enable intrinsically fault-tolerant quantum computation. Here, we introduce a standalone scheme for both generating and detecting individual Ising anyons using tunable gate voltages in a heterostructure containing a non-Abelian Kitaev spin liquid and a monolayer semiconductor. The key ingredients of our setup are a Kondo coupling to stabilize an Ising anyon in the spin liquid around each electron in the semiconductor, and a large charging energy to allow control over the electron numbers in distinct gate-defined regions of the semiconductor. In particular, a single Ising anyon can be generated at a disk-shaped region by gate tuning its electron number to one, while it can be interferometrically detected by measuring the electrical conductance of a ring-shaped region around it whose electron number is allowed to fluctuate between zero and one. We provide concrete experimental guidelines for implementing our proposal in promising candidate materials like α-RuCl_{3}.