Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb...

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Bibliographic Details
Published in:APL materials 2024-06, Vol.12 (6), p.061114-061114-8
Main Authors: Stam, W. G., Gaowei, M., Echeverria, E. M., Evans-Lutterodt, Kenneth, Jordan-Sweet, Jean, Juffmann, T., Karkare, S., Maxson, J., van der Molen, S. J., Pennington, C., Saha, P., Smedley, J., Tromp, R. M.
Format: Article
Language:English
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MATERIALS SCIENCE
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Summary:Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (
ISSN:2166-532X
2166-532X
DOI:10.1063/5.0213461