Quasi-epitaxial growth of BaTiS3 films

Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial th...

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Bibliographic Details
Published in:Journal of materials research 2022-11, Vol.37 (21), p.3481-3490
Main Authors: Surendran, Mythili, Zhao, Boyang, Ren, Guodong, Singh, Shantanu, Avishai, Amir, Chen, Huandong, Han, Jae-Kyung, Kawasaki, Megumi, Mishra, Rohan, Ravichandran, Jayakanth
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Biomaterials
Chalcogenides
Chemistry and Materials Science
Epitaxial growth
Heterostructures
Hydrogen sulfide
Inorganic Chemistry
Invited Paper
Materials Engineering
Materials research
Materials Science
Nanotechnology
Partial pressure
Perovskites
Pressure effects
Pulsed laser deposition
Pulsed lasers
Scanning transmission electron microscopy
Substrates
Thin films
X-ray scattering
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Summary:Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial thin films of quasi-one-dimensional hexagonal chalcogenide BaTiS 3 by pulsed laser deposition. Optimal growth conditions were identified by varying the substrate temperature and H 2 S partial pressure and their effects on the film structure were examined. High-resolution thin film X-ray diffraction shows strong out-of-plane texture, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides. Graphical abstract
ISSN:0884-2914
2044-5326
DOI:10.1557/s43578-022-00776-y