Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($20\bar{2}$$\bar{1}$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12...

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Bibliographic Details
Published in:Optics express 2017-01, Vol.25 (3)
Main Authors: Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, Feezell, Daniel F.
Format: Article
Language:English
Subjects:
light emitting diodes
NANOSCIENCE AND NANOTECHNOLOGY
photoluminescence
Quantum-well, -wire and -dot devices
spectroscopy
time-resolved
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Summary:Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($20\bar{2}$$\bar{1}$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($20\bar{2}$$\bar{1}$) LEDs.
ISSN:1094-4087
1094-4087