The effect of gettering on areal inhomogeneities in large-area multicrystalline-silicon solar cells

Multicrystalline-silicon (mc-Si) materials and cells feature large areal variations in material and junction quality. The regions with poor device quality have been predicted to have more recombination current at forward bias than a simple area-weighted average due to the parallel interconnection of...

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Bibliographic Details
Main Authors: Gee, J.M., Sopori, B.L.
Format: Book
Language:English
Subjects:
CURRENT DENSITY
ENERGY EFFICIENCY
EXPERIMENTAL DATA
GETTERING
MATERIALS SCIENCE
POLYCRYSTALS
RECOMBINATION
SILICON
SILICON SOLAR CELLS
SOLAR ENERGY
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Summary:Multicrystalline-silicon (mc-Si) materials and cells feature large areal variations in material and junction quality. The regions with poor device quality have been predicted to have more recombination current at forward bias than a simple area-weighted average due to the parallel interconnection of the good and bad regions by the front junction. The authors have examined the effect of gettering on areal inhomogeneities in large-area mc-Si cells. Cells with large areal inhomogeneities were found to have increased non-ideal recombination current, which is in line with theoretical predictions. Phosphorus-diffusion and aluminum-alloy gettering of mc-Si was found to reduce the areal inhomogeneities and improve large-area mc-Si device performance.
ISSN:0160-8371