High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal–oxide–semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(100) surfaces. We show device-quality Si(100)/Al2O3 int...

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Bibliographic Details
Published in:Journal of applied physics 2001-07, Vol.90 (1), p.512-514
Main Authors: Guha, S., Cartier, E., Bojarczuk, N. A., Bruley, J., Gignac, L., Karasinski, J.
Format: Article
Language:English
Subjects:
ALUMINIUM
ATOMIC BEAMS
DEPOSITION
DIELECTRIC MATERIALS
LEAKAGE CURRENT
MATERIALS SCIENCE
OXIDES
OXYGEN
PHYSICS
THICKNESS
ULTRAHIGH VACUUM
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Summary:We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal–oxide–semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(100) surfaces. We show device-quality Si(100)/Al2O3 interfaces with interfacial trap densities in the 1010 cm−2 eV−1 range, and with leakage current densities five orders of magnitude lower than what is observed in SiO2 insulators at the same equivalent electrical thickness. As-grown films possess an amorphous-to-microcrystalline structure, depending upon the deposition temperature, and any interfacial layers between the Si(100) and Al2O3 layer are
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1373695