Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice

Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as comp...

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Bibliographic Details
Published in:Applied physics letters 2001-06, Vol.78 (26), p.4085-4087
Main Authors: Litovchenko, V. G., Korbutyak, D. V., Bercha, A. I., Kryuchenko, Yu. V., Krylyuk, S. G., Grahn, H. T., Hey, R., Ploog, K. H.
Format: Article
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
LASERS
LUMINESCENCE
PHYSICS
STIMULATED EMISSION
SUPERLATTICES
THICKNESS
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Summary:Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as compared to their symmetric indirect-gap counterparts with the same well width, and, thus, may be used as light-emitting devices, in particular, as low-threshold lasers in the red visible spectrum. This conjecture is supported by the observation of stimulated emission at T=80 K for a GaAs/AlAs superlattice with six monolayers well and three monolayers barrier width.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1379985