Ferromagnetism in magnetically doped III-V semiconductors

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formatio...

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Bibliographic Details
Published in:Physical review letters 2001-06, Vol.86 (24), p.5593-5596
Main Authors: Litvinov, V I, Dugaev, V K
Format: Article
Language:English
Subjects:
ELECTRONS
EXCHANGE INTERACTIONS
FERROMAGNETISM
ORIGIN
PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
TRANSITION TEMPERATURE
VALENCE
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Summary:The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all available experimental data and allows us to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.86.5593