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Martensitic fcc-to-hcp transformation observed in xenon at high pressure

Angle-resolved x-ray diffraction patterns of Xe to 127 GPa indicate that the fcc-to-hcp transition occurs martensitically between 3 and 70 GPa in diamond-anvil cells without an intermediate phase. These data also reveal that the transition occurs by the introduction of stacking disorder in the fcc l...

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Bibliographic Details
Published in:Physical review letters 2001-05, Vol.86 (20), p.4552-4555
Main Authors: Cynn, H, Yoo, C S, Baer, B, Iota-Herbei, V, McMahan, A K, Nicol, M, Carlson, S
Format: Article
Language:English
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Summary:Angle-resolved x-ray diffraction patterns of Xe to 127 GPa indicate that the fcc-to-hcp transition occurs martensitically between 3 and 70 GPa in diamond-anvil cells without an intermediate phase. These data also reveal that the transition occurs by the introduction of stacking disorder in the fcc lattice at low pressure, which grows into hcp domains with increasing pressure. The small energy difference between the hcp and the fcc structures may allow the two phases to coexist over a wide pressure range. Evidence of similar stacking disorder and incipient growth of an hcp phase are also observed in solid Kr.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.86.4552