Lifetimes of hydrogen and deuterium related vibrational modes in silicon

Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we...

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Bibliographic Details
Published in:Physical review letters 2001-10, Vol.87 (14), p.145501-145501
Main Authors: Budde, M, Lüpke, G, Chen, E, Zhang, X, Tolk, N H, Feldman, L C, Tarhan, E, Ramdas, A K, Stavola, M
Format: Article
Language:English
Subjects:
08 HYDROGEN
ABSORPTION SPECTROSCOPY
BLEACHING
DEFECTS
DEUTERIUM
HYDROGEN
PHYSICS
SILICON
SPECTROSCOPY
TRANSIENTS
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Summary:Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.87.145501