Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2 times 1

Preferential annihilation of mobile surface vacancies at the ends, rather than the sides, of dimer rows leads to a new, nonequilibrium, single-domain phase of Si(100) that is not accessible by epitaxial growth, but is stable at moderate temperatures ({ital T}{similar to}450 {degree}C). These results...

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Bibliographic Details
Published in:Physical review letters 1992-02, Vol.68:5
Main Authors: Bedrossian, P., Klitsner, T.
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
360606 - Other Materials- Physical Properties- (1992-)
ADSORPTION
ANNIHILATION
BASIC INTERACTIONS
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC INTERACTIONS
ELECTRON MICROSCOPES
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
INTERACTIONS
ION BEAMS
MATERIALS SCIENCE
MICROSCOPES
MOBILITY
PARTICLE INTERACTIONS
POINT DEFECTS
SEMIMETALS
SILICON
SORPTION
SPUTTERING
SURFACE PROPERTIES
VACANCIES
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Description
Summary:Preferential annihilation of mobile surface vacancies at the ends, rather than the sides, of dimer rows leads to a new, nonequilibrium, single-domain phase of Si(100) that is not accessible by epitaxial growth, but is stable at moderate temperatures ({ital T}{similar to}450 {degree}C). These results emerge from a tunneling-microscope study of layer-by-layer removal of Si from Si(100) under 225-eV Xe-ion bombardment.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.68.646