Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films

The spectral dependence of the photocurrent in intrinsic hydrogenated amorphous silicon (a-Si:H) films was measured in the annealed and light-soaked states. The photocurrents were modeled using numerical analysis which quantified the recombination in both the bulk as well as at the film surface and...

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Bibliographic Details
Published in:Applied physics letters 1991-11, Vol.59 (20), p.2549-2551
Main Authors: LI, Y. M, DAWSON, R. M, COLLINS, R. W, WRONSKI, C. R, WIEDEMAN, S
Format: Article
Language:English
Subjects:
360603 > Materials-- Properties
AMORPHOUS STATE
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
Electronic transport in condensed matter
ELEMENTS
Exact sciences and technology
HYDROGEN ADDITIONS
MATERIALS SCIENCE
MATERIALS TESTING
Photoconduction and photovoltaic effects
photodielectric effects
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
Physics
RECOMBINATION
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY
SOLAR EQUIPMENT
SURFACE PROPERTIES
TESTING 140501 > Solar Energy Conversion-- Photovoltaic Conversion
THIN FILMS
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Description
Summary:The spectral dependence of the photocurrent in intrinsic hydrogenated amorphous silicon (a-Si:H) films was measured in the annealed and light-soaked states. The photocurrents were modeled using numerical analysis which quantified the recombination in both the bulk as well as at the film surface and glass substrate interface. The results on films, having thicknesses between 1 and 3 μm, are consistent with thickness independent bulk transport properties and surface and substrate interface recombination velocities of (3–6)×104 and (1–2)×106 cm/s, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105949