Electrical properties of transition-metal carbides of group IV

Electrical resistivities of six single crystals of group-IV{ital B} transition-metal carbides are reported for temperatures between 4 and 1000 K. Hall coefficients of the crystals are reported for temperatures to 350 K. The chemical analyses of the ratio of carbon-to-metal atoms in the crystals (0.8...

Full description

Saved in:
Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1989-11, Vol.40 (14), p.9558-9564
Main Authors: MODINE, F. A, FOEGELLE, M. D, FINCH, C. B, ALLISON, C. Y
Format: Article
Language:English
Subjects:
360204 - Ceramics, Cermets, & Refractories- Physical Properties
BAND THEORY
BLOCH THEORY
CARBIDES
CARBON COMPOUNDS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Electronic transport in condensed matter
Exact sciences and technology
GRUENEISEN FORMULA
HALL EFFECT
HIGH TEMPERATURE
LOW TEMPERATURE
MATERIALS SCIENCE
MATHEMATICAL MODELS
MEAN FREE PATH
MEDIUM TEMPERATURE
MONOCRYSTALS
PHYSICAL PROPERTIES
Physics
TRANSITION ELEMENT COMPOUNDS
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electrical resistivities of six single crystals of group-IV{ital B} transition-metal carbides are reported for temperatures between 4 and 1000 K. Hall coefficients of the crystals are reported for temperatures to 350 K. The chemical analyses of the ratio of carbon-to-metal atoms in the crystals (0.89 to 0.99) were verified by an inverse linear relationship between the carbon-vacancy concentration and the low-temperature Hall mobilities. Bloch-Grueneisen theory provides a fit to the temperature dependence of the resistivity data that passes the {chi}{sup 2} test for TiC{sub {ital x}} and ZrC{sub {ital x}} but not for HfC{sub 0.99}. The measurements reveal a tendency toward resistivity saturation at high temperature that is well described by a parallel-resistance model in which the saturation resistivity corresponds to a carrier mean free path roughly equal to the lattice constant. The measurements are compared to earlier experimental studies and to predictions of band-structure calculations. Theories of electronic transport are evaluated.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.40.9558