Loading…

Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy

Physical and ion-enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self-sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO2 by noble gas and reactive ions, and ion beam enhanced c...

Full description

Saved in:

Bibliographic Details
Published in:	Applied physics letters 1989-11, Vol.55 (19), p.1960-1962
Main Author:	STEINBRUCHEL, C
Format:	Article
Language:	English
Subjects:	656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-) ARGON IONS CHALCOGENIDES CHARGED PARTICLES CHEMICAL REACTION YIELD COLLISIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena ELEMENTS ENERGY ETCHING Exact sciences and technology Impact phenomena (including electron spectra and sputtering) ION COLLISIONS IONS METALS MINERALS Other electron-impact emission phenomena OXIDE MINERALS OXIDES OXYGEN COMPOUNDS Physics SEMIMETALS SILICA SILICON SILICON COMPOUNDS SILICON OXIDES SPUTTERING SURFACE FINISHING THRESHOLD ENERGY YIELDS
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

cited_by	cdi_FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73
cites	cdi_FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73
container_end_page	1962
container_issue	19
container_start_page	1960
container_title	Applied physics letters
container_volume	55
creator	STEINBRUCHEL, C
description	Physical and ion-enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self-sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO2 by noble gas and reactive ions, and ion beam enhanced chemical etching of Si. The threshold energy must be taken into account for a quantitative description of etch yields even at intermediate ion energies. The relationship between the dependence of etch yields on ion energy and incident angle is also discussed.
doi_str_mv	10.1063/1.102336
format	article
fullrecord	<record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_5246965</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6711554</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73</originalsourceid><addsrcrecordid>eNo9kE1LxDAYhIMouK6CPyGIBy_VvE3TtEdZ_IIFL-45pOkbG-mmJSlK_71Zu3gahnkYmCHkGtg9sJI_QJKc8_KErIBJmXGA6pSsGGM8K2sB5-Qixq9kRaJWRO28-8YQdU_RY_icaYsj-ha9QTpYOnZzdCal2rfUDT5D3-mUtdR0uP9LcDIdnR32baR6ov3wcwCPdZfkzOo-4tVR12T3_PSxec227y9vm8dtZnghp0w2uUUmiqrNASsNkqEGXgHnvKkY1HVuLVpAy42udVGjMAhcayG0YXUj-ZrcLL1DnJyKxk1oOjN4j2ZSIi_KuhQJulsgE4YYA1o1BrfXYVbA1OE9BWp5L6G3CzrqmEbakEa7-M-XEkCIgv8CK8duVg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy</title><source>AIP Digital Archive</source><creator>STEINBRUCHEL, C</creator><creatorcontrib>STEINBRUCHEL, C</creatorcontrib><description>Physical and ion-enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self-sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO2 by noble gas and reactive ions, and ion beam enhanced chemical etching of Si. The threshold energy must be taken into account for a quantitative description of etch yields even at intermediate ion energies. The relationship between the dependence of etch yields on ion energy and incident angle is also discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.102336</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-) ; ARGON IONS ; CHALCOGENIDES ; CHARGED PARTICLES ; CHEMICAL REACTION YIELD ; COLLISIONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron and ion emission by liquids and solids; impact phenomena ; ELEMENTS ; ENERGY ; ETCHING ; Exact sciences and technology ; Impact phenomena (including electron spectra and sputtering) ; ION COLLISIONS ; IONS ; METALS ; MINERALS ; Other electron-impact emission phenomena ; OXIDE MINERALS ; OXIDES ; OXYGEN COMPOUNDS ; Physics ; SEMIMETALS ; SILICA ; SILICON ; SILICON COMPOUNDS ; SILICON OXIDES ; SPUTTERING ; SURFACE FINISHING ; THRESHOLD ENERGY ; YIELDS</subject><ispartof>Applied physics letters, 1989-11, Vol.55 (19), p.1960-1962</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73</citedby><cites>FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6711554$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5246965$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>STEINBRUCHEL, C</creatorcontrib><title>Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy</title><title>Applied physics letters</title><description>Physical and ion-enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self-sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO2 by noble gas and reactive ions, and ion beam enhanced chemical etching of Si. The threshold energy must be taken into account for a quantitative description of etch yields even at intermediate ion energies. The relationship between the dependence of etch yields on ion energy and incident angle is also discussed.</description><subject>656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)</subject><subject>ARGON IONS</subject><subject>CHALCOGENIDES</subject><subject>CHARGED PARTICLES</subject><subject>CHEMICAL REACTION YIELD</subject><subject>COLLISIONS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>ELEMENTS</subject><subject>ENERGY</subject><subject>ETCHING</subject><subject>Exact sciences and technology</subject><subject>Impact phenomena (including electron spectra and sputtering)</subject><subject>ION COLLISIONS</subject><subject>IONS</subject><subject>METALS</subject><subject>MINERALS</subject><subject>Other electron-impact emission phenomena</subject><subject>OXIDE MINERALS</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>Physics</subject><subject>SEMIMETALS</subject><subject>SILICA</subject><subject>SILICON</subject><subject>SILICON COMPOUNDS</subject><subject>SILICON OXIDES</subject><subject>SPUTTERING</subject><subject>SURFACE FINISHING</subject><subject>THRESHOLD ENERGY</subject><subject>YIELDS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAYhIMouK6CPyGIBy_VvE3TtEdZ_IIFL-45pOkbG-mmJSlK_71Zu3gahnkYmCHkGtg9sJI_QJKc8_KErIBJmXGA6pSsGGM8K2sB5-Qixq9kRaJWRO28-8YQdU_RY_icaYsj-ha9QTpYOnZzdCal2rfUDT5D3-mUtdR0uP9LcDIdnR32baR6ov3wcwCPdZfkzOo-4tVR12T3_PSxec227y9vm8dtZnghp0w2uUUmiqrNASsNkqEGXgHnvKkY1HVuLVpAy42udVGjMAhcayG0YXUj-ZrcLL1DnJyKxk1oOjN4j2ZSIi_KuhQJulsgE4YYA1o1BrfXYVbA1OE9BWp5L6G3CzrqmEbakEa7-M-XEkCIgv8CK8duVg</recordid><startdate>19891106</startdate><enddate>19891106</enddate><creator>STEINBRUCHEL, C</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19891106</creationdate><title>Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy</title><author>STEINBRUCHEL, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)</topic><topic>ARGON IONS</topic><topic>CHALCOGENIDES</topic><topic>CHARGED PARTICLES</topic><topic>CHEMICAL REACTION YIELD</topic><topic>COLLISIONS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>ELEMENTS</topic><topic>ENERGY</topic><topic>ETCHING</topic><topic>Exact sciences and technology</topic><topic>Impact phenomena (including electron spectra and sputtering)</topic><topic>ION COLLISIONS</topic><topic>IONS</topic><topic>METALS</topic><topic>MINERALS</topic><topic>Other electron-impact emission phenomena</topic><topic>OXIDE MINERALS</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>Physics</topic><topic>SEMIMETALS</topic><topic>SILICA</topic><topic>SILICON</topic><topic>SILICON COMPOUNDS</topic><topic>SILICON OXIDES</topic><topic>SPUTTERING</topic><topic>SURFACE FINISHING</topic><topic>THRESHOLD ENERGY</topic><topic>YIELDS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>STEINBRUCHEL, C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>STEINBRUCHEL, C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy</atitle><jtitle>Applied physics letters</jtitle><date>1989-11-06</date><risdate>1989</risdate><volume>55</volume><issue>19</issue><spage>1960</spage><epage>1962</epage><pages>1960-1962</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Physical and ion-enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self-sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO2 by noble gas and reactive ions, and ion beam enhanced chemical etching of Si. The threshold energy must be taken into account for a quantitative description of etch yields even at intermediate ion energies. The relationship between the dependence of etch yields on ion energy and incident angle is also discussed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102336</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 1989-11, Vol.55 (19), p.1960-1962
issn	0003-6951 1077-3118
language	eng
recordid	cdi_osti_scitechconnect_5246965
source	AIP Digital Archive
subjects	656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-) ARGON IONS CHALCOGENIDES CHARGED PARTICLES CHEMICAL REACTION YIELD COLLISIONS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena ELEMENTS ENERGY ETCHING Exact sciences and technology Impact phenomena (including electron spectra and sputtering) ION COLLISIONS IONS METALS MINERALS Other electron-impact emission phenomena OXIDE MINERALS OXIDES OXYGEN COMPOUNDS Physics SEMIMETALS SILICA SILICON SILICON COMPOUNDS SILICON OXIDES SPUTTERING SURFACE FINISHING THRESHOLD ENERGY YIELDS
title	Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T00%3A50%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Universal%20energy%20dependence%20of%20physical%20and%20ion-enhanced%20chemical%20etch%20yields%20at%20low%20ion%20energy&rft.jtitle=Applied%20physics%20letters&rft.au=STEINBRUCHEL,%20C&rft.date=1989-11-06&rft.volume=55&rft.issue=19&rft.spage=1960&rft.epage=1962&rft.pages=1960-1962&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.102336&rft_dat=%3Cpascalfrancis_osti_%3E6711554%3C/pascalfrancis_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c347t-7b2fe0548d21e8a170ea1381333b801992ffef1ef3ca9a49e5ce13aa55ac09b73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true