MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range

A physically based semiempirical model for electron mobilities of the MOSFET inversion layers that is valid over a large temperature range (77 K ≤ ⊺ ≤ 370 K) is discussed. It is based on a reciprocal sum of three scattering mechanisms, i.e. phonon, Coulomb, and surface roughness scattering, and is e...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1456-1463
Main Authors: Jeon, D.S., Burk, D.E.
Format: Article
Language:English
Subjects:
360603 - Materials- Properties
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
640304 - Atomic, Molecular & Chemical Physics- Collision Phenomena
990200 - Mathematics & Computers
Applied sciences
ATOMIC AND MOLECULAR PHYSICS
Carrier confinement
CARRIER MOBILITY
CHARGE DENSITY
Circuit simulation
DATA
Electron mobility
ELECTRON-PHONON COUPLING
Electronics
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
INFORMATION
IONIZATION
MATERIALS SCIENCE
MOBILITY
MOS TRANSISTORS
MOSFET
MOSFET circuits
NUMERICAL DATA
PARAMETRIC ANALYSIS
Phonons
Rough surfaces
SCATTERING
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SURFACE IONIZATION
Surface roughness
TEMPERATURE DEPENDENCE
Temperature distribution
TEMPERATURE EFFECTS
TRANSISTORS
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Summary:A physically based semiempirical model for electron mobilities of the MOSFET inversion layers that is valid over a large temperature range (77 K ≤ ⊺ ≤ 370 K) is discussed. It is based on a reciprocal sum of three scattering mechanisms, i.e. phonon, Coulomb, and surface roughness scattering, and is explicitly dependent on temperature and transverse electric field. The model is more physically based than other semiempirical models, but has an equivalent number of extracted parameters. It is shown that this model compares more favorably with the experimental data than previous models. The implicit dependencies of the model parameters on oxide charge density and surface roughness are confirmed.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.30959