MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range

• Published in: IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1456-1463
• Main Authors: Jeon, D.S., Burk, D.E.
• Format: Article
• Language: English
• Subjects: 360603 - Materials- Properties; 426000 - Engineering- Components, Electron Devices & Circuits- (1990-); 640304 - Atomic, Molecular & Chemical Physics- Collision Phenomena; 990200 - Mathematics & Computers; Applied sciences; ATOMIC AND MOLECULAR PHYSICS; Carrier confinement; CARRIER MOBILITY; CHARGE DENSITY; Circuit simulation; DATA; Electron mobility; ELECTRON-PHONON COUPLING; Electronics; ENGINEERING; Exact sciences and technology; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; INFORMATION; IONIZATION; MATERIALS SCIENCE; MOBILITY; MOS TRANSISTORS; MOSFET; MOSFET circuits; NUMERICAL DATA; PARAMETRIC ANALYSIS; Phonons; Rough surfaces; SCATTERING; SEMICONDUCTOR DEVICES; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SURFACE IONIZATION; Surface roughness; TEMPERATURE DEPENDENCE; Temperature distribution; TEMPERATURE EFFECTS; TRANSISTORS
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.30959

A physically based semiempirical model for electron mobilities of the MOSFET inversion layers that is valid over a large temperature range (77 K ≤ ⊺ ≤ 370 K) is discussed. It is based on a reciprocal sum of three scattering mechanisms, i.e. phonon, Coulomb, and surface roughness scattering, and is explicitly dependent on temperature and transverse electric field. The model is more physically based than other semiempirical models, but has an equivalent number of extracted parameters. It is shown that this model compares more favorably with the experimental data than previous models. The implicit dependencies of the model parameters on oxide charge density and surface roughness are confirmed.