Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon

We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually...

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Bibliographic Details
Published in:Physical review letters 1989-10, Vol.63:18
Main Authors: Andriamonje, S., Anne, R., de Castro Faria, N.V., Chevallier, M., Cohen, C., Dural, J., Gaillard, M.J., Genre, R., Hage-Ali, M., Kirsch, R.
Format: Article
Language:English
Subjects:
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
BEAMS
CATIONS
CHANNELING
CHARGE STATE
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRELATIONS
CROSS SECTIONS
CRYSTALS
ELEMENTS
ENERGY LOSSES
ENERGY RANGE
ION BEAMS
ION CHANNELING
IONIZATION
IONS
LOSSES
MEV RANGE
MEV RANGE 10-100
MONOCRYSTALS
SEMIMETALS
SILICON
STOPPING POWER
XENON IONS
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Summary:We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.63.1930