Loading…

Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon

We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 1989-10, Vol.63:18
Main Authors: Andriamonje, S., Anne, R., de Castro Faria, N.V., Chevallier, M., Cohen, C., Dural, J., Gaillard, M.J., Genre, R., Hage-Ali, M., Kirsch, R.
Format: Article
Language:English
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue
container_start_page
container_title Physical review letters
container_volume 63:18
creator Andriamonje, S.
Anne, R.
de Castro Faria, N.V.
Chevallier, M.
Cohen, C.
Dural, J.
Gaillard, M.J.
Genre, R.
Hage-Ali, M.
Kirsch, R.
description We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.
doi_str_mv 10.1103/PhysRevLett.63.1930
format article
fullrecord <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_5352150</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5352150</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_53521503</originalsourceid><addsrcrecordid>eNqNjsFKAzEQhoMouFafwMvgVbKd2bhd9ywVDwoiRbyVkJ26kTgpnVSoT-8iPoCnD36-D35jLglrInTz5_GgL_z1yKXUC1dT7_DIVIRdbzuim2NTITqyPWJ3as5UPxCRmsVtZYZl4lB2WWz83PpQIGaJ375MAC8DsPDu_QApq0LeQNPZJ36d7-GNQfdbcO01RAlxYPlNFcLoRTjxMO2gMcWQ5dycbHxSvvjjzFzdL1d3DzZriWsNsXAYJ0-mK-vWtQ216P4l_QAmW02N</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</title><source>American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)</source><creator>Andriamonje, S. ; Anne, R. ; de Castro Faria, N.V. ; Chevallier, M. ; Cohen, C. ; Dural, J. ; Gaillard, M.J. ; Genre, R. ; Hage-Ali, M. ; Kirsch, R.</creator><creatorcontrib>Andriamonje, S. ; Anne, R. ; de Castro Faria, N.V. ; Chevallier, M. ; Cohen, C. ; Dural, J. ; Gaillard, M.J. ; Genre, R. ; Hage-Ali, M. ; Kirsch, R.</creatorcontrib><description>We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.63.1930</identifier><language>eng</language><publisher>United States</publisher><subject>656003 - Condensed Matter Physics- Interactions between Beams &amp; Condensed Matter- (1987-) ; BEAMS ; CATIONS ; CHANNELING ; CHARGE STATE ; CHARGED PARTICLES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CORRELATIONS ; CROSS SECTIONS ; CRYSTALS ; ELEMENTS ; ENERGY LOSSES ; ENERGY RANGE ; ION BEAMS ; ION CHANNELING ; IONIZATION ; IONS ; LOSSES ; MEV RANGE ; MEV RANGE 10-100 ; MONOCRYSTALS ; SEMIMETALS ; SILICON ; STOPPING POWER ; XENON IONS</subject><ispartof>Physical review letters, 1989-10, Vol.63:18</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/5352150$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Andriamonje, S.</creatorcontrib><creatorcontrib>Anne, R.</creatorcontrib><creatorcontrib>de Castro Faria, N.V.</creatorcontrib><creatorcontrib>Chevallier, M.</creatorcontrib><creatorcontrib>Cohen, C.</creatorcontrib><creatorcontrib>Dural, J.</creatorcontrib><creatorcontrib>Gaillard, M.J.</creatorcontrib><creatorcontrib>Genre, R.</creatorcontrib><creatorcontrib>Hage-Ali, M.</creatorcontrib><creatorcontrib>Kirsch, R.</creatorcontrib><title>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</title><title>Physical review letters</title><description>We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.</description><subject>656003 - Condensed Matter Physics- Interactions between Beams &amp; Condensed Matter- (1987-)</subject><subject>BEAMS</subject><subject>CATIONS</subject><subject>CHANNELING</subject><subject>CHARGE STATE</subject><subject>CHARGED PARTICLES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CORRELATIONS</subject><subject>CROSS SECTIONS</subject><subject>CRYSTALS</subject><subject>ELEMENTS</subject><subject>ENERGY LOSSES</subject><subject>ENERGY RANGE</subject><subject>ION BEAMS</subject><subject>ION CHANNELING</subject><subject>IONIZATION</subject><subject>IONS</subject><subject>LOSSES</subject><subject>MEV RANGE</subject><subject>MEV RANGE 10-100</subject><subject>MONOCRYSTALS</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>STOPPING POWER</subject><subject>XENON IONS</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqNjsFKAzEQhoMouFafwMvgVbKd2bhd9ywVDwoiRbyVkJ26kTgpnVSoT-8iPoCnD36-D35jLglrInTz5_GgL_z1yKXUC1dT7_DIVIRdbzuim2NTITqyPWJ3as5UPxCRmsVtZYZl4lB2WWz83PpQIGaJ375MAC8DsPDu_QApq0LeQNPZJ36d7-GNQfdbcO01RAlxYPlNFcLoRTjxMO2gMcWQ5dycbHxSvvjjzFzdL1d3DzZriWsNsXAYJ0-mK-vWtQ216P4l_QAmW02N</recordid><startdate>19891030</startdate><enddate>19891030</enddate><creator>Andriamonje, S.</creator><creator>Anne, R.</creator><creator>de Castro Faria, N.V.</creator><creator>Chevallier, M.</creator><creator>Cohen, C.</creator><creator>Dural, J.</creator><creator>Gaillard, M.J.</creator><creator>Genre, R.</creator><creator>Hage-Ali, M.</creator><creator>Kirsch, R.</creator><scope>OTOTI</scope></search><sort><creationdate>19891030</creationdate><title>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</title><author>Andriamonje, S. ; Anne, R. ; de Castro Faria, N.V. ; Chevallier, M. ; Cohen, C. ; Dural, J. ; Gaillard, M.J. ; Genre, R. ; Hage-Ali, M. ; Kirsch, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_53521503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>656003 - Condensed Matter Physics- Interactions between Beams &amp; Condensed Matter- (1987-)</topic><topic>BEAMS</topic><topic>CATIONS</topic><topic>CHANNELING</topic><topic>CHARGE STATE</topic><topic>CHARGED PARTICLES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CORRELATIONS</topic><topic>CROSS SECTIONS</topic><topic>CRYSTALS</topic><topic>ELEMENTS</topic><topic>ENERGY LOSSES</topic><topic>ENERGY RANGE</topic><topic>ION BEAMS</topic><topic>ION CHANNELING</topic><topic>IONIZATION</topic><topic>IONS</topic><topic>LOSSES</topic><topic>MEV RANGE</topic><topic>MEV RANGE 10-100</topic><topic>MONOCRYSTALS</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>STOPPING POWER</topic><topic>XENON IONS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andriamonje, S.</creatorcontrib><creatorcontrib>Anne, R.</creatorcontrib><creatorcontrib>de Castro Faria, N.V.</creatorcontrib><creatorcontrib>Chevallier, M.</creatorcontrib><creatorcontrib>Cohen, C.</creatorcontrib><creatorcontrib>Dural, J.</creatorcontrib><creatorcontrib>Gaillard, M.J.</creatorcontrib><creatorcontrib>Genre, R.</creatorcontrib><creatorcontrib>Hage-Ali, M.</creatorcontrib><creatorcontrib>Kirsch, R.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andriamonje, S.</au><au>Anne, R.</au><au>de Castro Faria, N.V.</au><au>Chevallier, M.</au><au>Cohen, C.</au><au>Dural, J.</au><au>Gaillard, M.J.</au><au>Genre, R.</au><au>Hage-Ali, M.</au><au>Kirsch, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</atitle><jtitle>Physical review letters</jtitle><date>1989-10-30</date><risdate>1989</risdate><volume>63:18</volume><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.</abstract><cop>United States</cop><doi>10.1103/PhysRevLett.63.1930</doi></addata></record>
fulltext fulltext
identifier ISSN: 0031-9007
ispartof Physical review letters, 1989-10, Vol.63:18
issn 0031-9007
1079-7114
language eng
recordid cdi_osti_scitechconnect_5352150
source American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)
subjects 656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
BEAMS
CATIONS
CHANNELING
CHARGE STATE
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRELATIONS
CROSS SECTIONS
CRYSTALS
ELEMENTS
ENERGY LOSSES
ENERGY RANGE
ION BEAMS
ION CHANNELING
IONIZATION
IONS
LOSSES
MEV RANGE
MEV RANGE 10-100
MONOCRYSTALS
SEMIMETALS
SILICON
STOPPING POWER
XENON IONS
title Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T22%3A56%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron-impact%20ionization%20and%20energy%20loss%20of%2027-MeV/u%20Xe%20sup%2035+%20incident%20ions%20channeled%20in%20silicon&rft.jtitle=Physical%20review%20letters&rft.au=Andriamonje,%20S.&rft.date=1989-10-30&rft.volume=63:18&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.63.1930&rft_dat=%3Costi%3E5352150%3C/osti%3E%3Cgrp_id%3Ecdi_FETCH-osti_scitechconnect_53521503%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true