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Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon
We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually...
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Published in: | Physical review letters 1989-10, Vol.63:18 |
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container_title | Physical review letters |
container_volume | 63:18 |
creator | Andriamonje, S. Anne, R. de Castro Faria, N.V. Chevallier, M. Cohen, C. Dural, J. Gaillard, M.J. Genre, R. Hage-Ali, M. Kirsch, R. |
description | We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model. |
doi_str_mv | 10.1103/PhysRevLett.63.1930 |
format | article |
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They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.63.1930</identifier><language>eng</language><publisher>United States</publisher><subject>656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-) ; BEAMS ; CATIONS ; CHANNELING ; CHARGE STATE ; CHARGED PARTICLES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CORRELATIONS ; CROSS SECTIONS ; CRYSTALS ; ELEMENTS ; ENERGY LOSSES ; ENERGY RANGE ; ION BEAMS ; ION CHANNELING ; IONIZATION ; IONS ; LOSSES ; MEV RANGE ; MEV RANGE 10-100 ; MONOCRYSTALS ; SEMIMETALS ; SILICON ; STOPPING POWER ; XENON IONS</subject><ispartof>Physical review letters, 1989-10, Vol.63:18</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/5352150$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Andriamonje, S.</creatorcontrib><creatorcontrib>Anne, R.</creatorcontrib><creatorcontrib>de Castro Faria, N.V.</creatorcontrib><creatorcontrib>Chevallier, M.</creatorcontrib><creatorcontrib>Cohen, C.</creatorcontrib><creatorcontrib>Dural, J.</creatorcontrib><creatorcontrib>Gaillard, M.J.</creatorcontrib><creatorcontrib>Genre, R.</creatorcontrib><creatorcontrib>Hage-Ali, M.</creatorcontrib><creatorcontrib>Kirsch, R.</creatorcontrib><title>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</title><title>Physical review letters</title><description>We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.</description><subject>656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)</subject><subject>BEAMS</subject><subject>CATIONS</subject><subject>CHANNELING</subject><subject>CHARGE STATE</subject><subject>CHARGED PARTICLES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CORRELATIONS</subject><subject>CROSS SECTIONS</subject><subject>CRYSTALS</subject><subject>ELEMENTS</subject><subject>ENERGY LOSSES</subject><subject>ENERGY RANGE</subject><subject>ION BEAMS</subject><subject>ION CHANNELING</subject><subject>IONIZATION</subject><subject>IONS</subject><subject>LOSSES</subject><subject>MEV RANGE</subject><subject>MEV RANGE 10-100</subject><subject>MONOCRYSTALS</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>STOPPING POWER</subject><subject>XENON IONS</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqNjsFKAzEQhoMouFafwMvgVbKd2bhd9ywVDwoiRbyVkJ26kTgpnVSoT-8iPoCnD36-D35jLglrInTz5_GgL_z1yKXUC1dT7_DIVIRdbzuim2NTITqyPWJ3as5UPxCRmsVtZYZl4lB2WWz83PpQIGaJ375MAC8DsPDu_QApq0LeQNPZJ36d7-GNQfdbcO01RAlxYPlNFcLoRTjxMO2gMcWQ5dycbHxSvvjjzFzdL1d3DzZriWsNsXAYJ0-mK-vWtQ216P4l_QAmW02N</recordid><startdate>19891030</startdate><enddate>19891030</enddate><creator>Andriamonje, S.</creator><creator>Anne, R.</creator><creator>de Castro Faria, N.V.</creator><creator>Chevallier, M.</creator><creator>Cohen, C.</creator><creator>Dural, J.</creator><creator>Gaillard, M.J.</creator><creator>Genre, R.</creator><creator>Hage-Ali, M.</creator><creator>Kirsch, R.</creator><scope>OTOTI</scope></search><sort><creationdate>19891030</creationdate><title>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</title><author>Andriamonje, S. ; Anne, R. ; de Castro Faria, N.V. ; Chevallier, M. ; Cohen, C. ; Dural, J. ; Gaillard, M.J. ; Genre, R. ; Hage-Ali, M. ; Kirsch, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_53521503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)</topic><topic>BEAMS</topic><topic>CATIONS</topic><topic>CHANNELING</topic><topic>CHARGE STATE</topic><topic>CHARGED PARTICLES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CORRELATIONS</topic><topic>CROSS SECTIONS</topic><topic>CRYSTALS</topic><topic>ELEMENTS</topic><topic>ENERGY LOSSES</topic><topic>ENERGY RANGE</topic><topic>ION BEAMS</topic><topic>ION CHANNELING</topic><topic>IONIZATION</topic><topic>IONS</topic><topic>LOSSES</topic><topic>MEV RANGE</topic><topic>MEV RANGE 10-100</topic><topic>MONOCRYSTALS</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>STOPPING POWER</topic><topic>XENON IONS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andriamonje, S.</creatorcontrib><creatorcontrib>Anne, R.</creatorcontrib><creatorcontrib>de Castro Faria, N.V.</creatorcontrib><creatorcontrib>Chevallier, M.</creatorcontrib><creatorcontrib>Cohen, C.</creatorcontrib><creatorcontrib>Dural, J.</creatorcontrib><creatorcontrib>Gaillard, M.J.</creatorcontrib><creatorcontrib>Genre, R.</creatorcontrib><creatorcontrib>Hage-Ali, M.</creatorcontrib><creatorcontrib>Kirsch, R.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andriamonje, S.</au><au>Anne, R.</au><au>de Castro Faria, N.V.</au><au>Chevallier, M.</au><au>Cohen, C.</au><au>Dural, J.</au><au>Gaillard, M.J.</au><au>Genre, R.</au><au>Hage-Ali, M.</au><au>Kirsch, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon</atitle><jtitle>Physical review letters</jtitle><date>1989-10-30</date><risdate>1989</risdate><volume>63:18</volume><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>We have measured the emerging charge-state distribution of 27-MeV/u Xe{sup 35+} beams channeled through a thin Si single crystal, and deduced electron impact ionization cross sections for Xe{sup 35+} to Xe{sup 45+} by 14.7-keV electrons. They are {approx}2 to 4 times higher than predicted by usually accepted empirical estimations. We have also measured the energy loss versus emerging charge state. For hyperchanneled Xe{sup {ital Q}+} ions, the stopping power depends only on the mean (and not on the actually sampled) density of valence electrons and compares well with the prediction of the electron gas model.</abstract><cop>United States</cop><doi>10.1103/PhysRevLett.63.1930</doi></addata></record> |
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subjects | 656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-) BEAMS CATIONS CHANNELING CHARGE STATE CHARGED PARTICLES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CORRELATIONS CROSS SECTIONS CRYSTALS ELEMENTS ENERGY LOSSES ENERGY RANGE ION BEAMS ION CHANNELING IONIZATION IONS LOSSES MEV RANGE MEV RANGE 10-100 MONOCRYSTALS SEMIMETALS SILICON STOPPING POWER XENON IONS |
title | Electron-impact ionization and energy loss of 27-MeV/u Xe sup 35+ incident ions channeled in silicon |
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