A Thermal Instability in the Laser-Driven Melting and Recrystallization of Thin Silicon Films on Glass Substrates

This paper develops a conductive heat transfer stability theory for the laser-driven melting and recrystallization of thin silicon films deposited on conductive (glass) substrates. The important parameters are: laser power, laser intensity distribution, and beam scanning speed. Basic state temperatu...

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Bibliographic Details
Published in:Journal of heat transfer 1987-11, Vol.109 (4), p.841-847
Main Authors: Grigoropoulos, C. P, Buckholz, R. H, Domoto, G. A
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
420400 - Engineering- Heat Transfer & Fluid Flow
CALCULATION METHODS
Condensed matter: structure, mechanical and thermal properties
ELEMENTS
ENGINEERING
Exact sciences and technology
GLASS
HEATING
LASER-RADIATION HEATING
MATERIALS SCIENCE
PHYSICAL PROPERTIES
Physics
PLASMA HEATING
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SUBSTRATES
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
TEMPERATURE DISTRIBUTION
THERMAL CONDUCTIVITY
THERMODYNAMIC PROPERTIES
Thin film structure and morphology
THIN FILMS
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Summary:This paper develops a conductive heat transfer stability theory for the laser-driven melting and recrystallization of thin silicon films deposited on conductive (glass) substrates. The important parameters are: laser power, laser intensity distribution, and beam scanning speed. Basic state temperature distributions are obtained for straight phase boundaries. These calculated temperature distributions show the origin of instability. A linear perturbation analysis is used to obtain the leading order corrections to the basic-state temperature fields. The perturbation time rate of growth, as a function of the disturbance wavelength, is then predicted.
ISSN:0022-1481
1528-8943
DOI:10.1115/1.3248192