Effect of strain on surface morphology in highly strained InGaAs films

The evolution of film microstructure is from a 2-D rippled surface in the beginning stages of growth to 3-D island morphology.

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Bibliographic Details
Published in:Physical review letters 1991-06, Vol.66 (23), p.3032-3035
Main Authors: SNYDER, C. W, ORR, B. G, KESSLER, D, SANDER, L. M
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
COHERENT SCATTERING
Condensed matter: structure, mechanical and thermal properties
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DATA
DIFFRACTION
DIMENSIONS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
Exact sciences and technology
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IN-SITU PROCESSING
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
MATERIALS SCIENCE
MICROSCOPY
MICROSTRUCTURE
MORPHOLOGY
NUMERICAL DATA
Physics
PNICTIDES
PROCESSING
RELAXATION
SCATTERING 360602 > Other Materials-- Structure & Phase Studies
Solid surfaces and solid-solid interfaces
STRAINS
STRESS RELAXATION
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
THICKNESS
Thin film structure and morphology
THIN FILMS
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Description
Summary:The evolution of film microstructure is from a 2-D rippled surface in the beginning stages of growth to 3-D island morphology.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.66.3032