Resonant dielectronic and direct excitation in crystal channels

We have observed dielectronic and direct excitation of H-like S{sup 15+} and Ca{sup 19+} and He-like Ti{sup 20+} ions in silicon channels caused by collision with weakly bound target electrons which behave as a free-electron gas. As {ital in} acuo, relaxation of the doubly excited states can occur r...

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Bibliographic Details
Published in:Physical review letters 1989-08, Vol.63 (7), p.742-745
Main Authors: DATZ, S, VANE, C. R, ROSSEEL, T. M, DITTNER, P. F, GIESE, J. P, GOMEZ DEL CAMPO, J, JONES, N. L, KRAUSE, H. F, MILLER, P. D, SCHULZ, M, SCHONE, H
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
ABSORPTION
Atomic and molecular collision processes and interactions
Atomic and molecular physics
BOUND STATE
CALCIUM IONS
CATIONS
CHANNELING
CHARGE STATE
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
Exact sciences and technology
EXCITED STATES
FERMIONS
ION CHANNELING
IONIZING RADIATIONS
IONS
LEPTONS
MATERIALS SCIENCE
Physics
RADIATIONS
RELAXATION
RESONANCE ABSORPTION
Scattering of atoms, molecules and ions
SEMIMETALS
SILICON
SPECTRA
SULFUR IONS
TITANIUM IONS
X RADIATION
X-RAY SPECTRA
YIELDS
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Summary:We have observed dielectronic and direct excitation of H-like S{sup 15+} and Ca{sup 19+} and He-like Ti{sup 20+} ions in silicon channels caused by collision with weakly bound target electrons which behave as a free-electron gas. As {ital in} acuo, relaxation of the doubly excited states can occur radiatively leading to ions of decreased charge, but in a crystal channel collisional effects can cause double ionization. The effects are seen in both the x-ray yields and charge-state fractions, and, in the case of Ti{sup 20+}, in charge-state x-ray coincidences.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.63.742