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Thermoelectric properties of pressure-sintered Si sub 0. 8 Ge sub 0. 2 thermoelectric alloys
The thermoelectric properties of 28 sintered Si{sub 0.8} Ge{sub 0.2} alloys, heavily doped with either boron or phosphorus and prepared from powders with median particle sizes ranging from about 1 {mu}m to over 100 {mu}m, have been determined from 300 to 1300 K. The thermal conductivity decreases wi...
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Published in: | Journal of applied physics 1991-04, Vol.69:8 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The thermoelectric properties of 28 sintered Si{sub 0.8} Ge{sub 0.2} alloys, heavily doped with either boron or phosphorus and prepared from powders with median particle sizes ranging from about 1 {mu}m to over 100 {mu}m, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size, however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes {ital et} {ital al}. (J. Appl. Phys. {bold 10}, 2899 (1964)) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.348408 |