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Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa sub 2 Cu sub 3 O sub 7

YBa{sub 2}Cu{sub 3}O{sub 7} films 2000--7500 A thick were deposited onto (100) LaAlO{sub 3} substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4{times}10{sup 6} A/cm{sup 2} at 77 K, transition temperatures ({i...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59:5
Main Authors: Hiskes, R., DiCarolis, S.A., Young, J.L., Laderman, S.S., Jacowitz, R.D., Taber, R.C.
Format: Article
Language:English
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Summary:YBa{sub 2}Cu{sub 3}O{sub 7} films 2000--7500 A thick were deposited onto (100) LaAlO{sub 3} substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4{times}10{sup 6} A/cm{sup 2} at 77 K, transition temperatures ({ital T}{sub {ital c}} at {ital R}=0) as high as 91 K, and the 10 GHz microwave surface resistance {ital R}{sub {ital s}} as low as 40 {mu}{Omega} at 4.2 K and 400 {mu}{Omega} at 77 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105400