Photon-stimulated desorption of fluorine from silicon via substrate core excitations

Photon-stimulated desorption (PSD) of F{sup +} was performed for silicon (111) surfaces terminated with fluorine atoms. The surfaces were prepared by exposure of clean silicon to XeF{sub 2}. The onset for PSD at the Si 2{ital p} edge correlated with the transition from the 2{ital p} level of the bon...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1989-08, Vol.40 (5), p.3143-3150
Main Authors: Yarmoff, JA, Joyce, SA
Format: Article
Language:English
Subjects:
360603 - Materials- Properties
DESORPTION
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
ENERGY-LEVEL TRANSITIONS
FLUORINE
HALOGENS
KINETIC ENERGY
MASSLESS PARTICLES
MATERIALS SCIENCE
NONMETALS
PHOTONS
SEMIMETALS
SILICON
SORPTIVE PROPERTIES
SURFACE PROPERTIES
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Summary:Photon-stimulated desorption (PSD) of F{sup +} was performed for silicon (111) surfaces terminated with fluorine atoms. The surfaces were prepared by exposure of clean silicon to XeF{sub 2}. The onset for PSD at the Si 2{ital p} edge correlated with the transition from the 2{ital p} level of the bonding silicon atom to the conduction-band minimum, and was thus a function of the oxidation state of the bonding atom. The ions originating from a SiF surface species desorbed along the surface normal while the ions from a SiF{sub 3} group desorbed in off-normal directions. Localized 3{ital s} and 3{ital p} Rydberg-like resonances were observed in the quasimolecular SiF{sub 3} moieties. The ion kinetic-energy distributions were measured as an aid to elucidating the desorption mechanism. Measurements of the PSD of F{sup +} at the Si 2{ital s} edge were used to confirm the 3{ital s} and 3{ital p} character of the measured resonances.
ISSN:0163-1829
1095-3795
DOI:10.1103/physrevb.40.3143