Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors

There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type...

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Bibliographic Details
Published in:Journal of applied physics 1991-05, Vol.69 (9), p.6500-6505
Main Authors: HUGHES, R. C, ZIPPERIAN, T. E, DAWSON, L. R, BIEFELD, R. M, WALKO, R. J, DVORACK, M. A
Format: Article
Language:English
Subjects:
360603 - Materials- Properties
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CONVERSION
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
ENERGY CONVERSION
EPITAXY
Exact sciences and technology
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
JUNCTIONS
LEAKAGE CURRENT
MATERIALS
MATERIALS SCIENCE
N-TYPE CONDUCTORS
NEAR ULTRAVIOLET RADIATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC EFFECT
Physics
PNICTIDES
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SURFACE COATING
ULTRAVIOLET RADIATION
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Summary:There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.348858