Nanocrystalline barium titanate : evidence for the absence of ferroelectricity in sol-gel derived thin-layer capacitors

Nanocrystalline BaTiO3 thin-layer capacitors were integrated onto silicon by sol-gel processing using alkoxide precursor solutions. 200-nm-thick layers were formed and found to be comprised of 25-nm grains in the cubic perovskite structure. Electrical measurements indicated a lack of polarization-re...

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Bibliographic Details
Published in:Applied physics letters 1993-11, Vol.63 (20), p.2753-2755
Main Authors: FREY, M. H, PAYNE, D. A
Format: Article
Language:English
Subjects:
360204 - Ceramics, Cermets, & Refractories- Physical Properties
ALKALINE EARTH METAL COMPOUNDS
Applied sciences
BARIUM COMPOUNDS
CAPACITORS
CURIE-WEISS LAW
DIELECTRIC PROPERTIES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
GRAIN SIZE
HYSTERESIS
MATERIALS SCIENCE
MICROSTRUCTURE
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SIZE
SOL-GEL PROCESS
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
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Summary:Nanocrystalline BaTiO3 thin-layer capacitors were integrated onto silicon by sol-gel processing using alkoxide precursor solutions. 200-nm-thick layers were formed and found to be comprised of 25-nm grains in the cubic perovskite structure. Electrical measurements indicated a lack of polarization-reversal hysteresis characteristics and Curie–Weiss behavior. The dielectric constant was 230 at room temperature. Properties are discussed in terms of a crystallite size effect. Stable dielectric properties with respect to temperature and voltage suggest that nanocrystalline BaTiO3 could find possible use as an integrated capacitor in decoupling and dynamic random access memory applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110324