Characteristics of single- and two-dimensional phase coupled arrays of vertical cavity surface emitting GaAs-AlGaAs lasers

• Published in: IEEE journal of quantum electronics 1990-11, Vol.26 (11), p.1873-1882
• Main Authors: van der Ziel, J.P., Deppe, D.G., Chand, N., Zydzik, G.J., Chu, S.N.G.
• Format: Article
• Language: English
• Subjects: 426002 - Engineering- Lasers & Masers- (1990-); ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; ELEMENTS; ENERGY; ENGINEERING; EPITAXY; FUNCTIONS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GAUSS FUNCTION; HETEROJUNCTIONS; JUNCTIONS; Laser modes; LASERS; MEDIUM TEMPERATURE; MINERALS; MIRRORS; Molecular beam epitaxial growth; MOLECULAR BEAM EPITAXY; OPERATION; Optical arrays; Optical coupling; Optical design; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; Phased arrays; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; SEMIMETALS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLID STATE LASERS; Stimulated emission; Surface emitting lasers; THRESHOLD ENERGY; Vertical cavity surface emitting lasers
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.62106

Two-dimensional arrays of 3*3 vertical cavity surface emitting GaAs-AlGaAs lasers with 7- mu m center spacing are described. The lasers were grown by molecular beam epitaxy and contain one grown GaAs-AlAs mirror under the active layer and a second, thermally deposited, high-reflectivity, SiO/sub 2/-Si mirror on top of the epitaxial layer. The array has a 295-K threshold of 90 mA, corresponding to 10 mA per laser. The individual lasers in the array have Gaussian beam profiles both spatially in the near field and angularly in the far field. When all the lasers in the array are operating in a coupled manner, the emission exhibits a lobed far-field pattern with a 5 degrees separation in the direction parallel to the contact edge and a 2.5 degrees separation perpendicular to the contact edge.< >