RF plasma deposition of amorphous silicon-germanium alloys : evidence for a chemisorption-based growth process

Amorphous silicon-germanium alloys (a-Si{sub 1{minus}x}Ge{sub x}:H,F) have been deposited by glow-discharge decomposition of silicon tetrafluoride (SiF{sub 4}) and germane (GeH{sub 4}) in mixture with hydrogen. The effect of total RF power and deposition temperature on the characteristics of the gas...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on plasma science 1990-12, Vol.18 (6), p.934-939
Main Authors: BRUNO, G, CAPEZZUTO, P, CICALA, G, MANODORO, P, TASSIELLI, V
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL REACTIONS
CHEMISORPTION
Cross-disciplinary physics: materials science
rheology
CRYSTAL GROWTH
DEPOSITION
ELECTRIC DISCHARGES
ELECTRIC PROBES
EMISSION SPECTROSCOPY
Exact sciences and technology
FLUORINE ADDITIONS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
GLOW DISCHARGES
HYDROGEN ADDITIONS
IN-SITU PROCESSING
INTERFEROMETRY
LANGMUIR PROBE
LASERS
MASS SPECTROSCOPY
MATERIALS SCIENCE
Methods of crystal growth
physics of crystal growth
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
Physics
PLASMA
PROBES
PROCESSING
RF SYSTEMS
SEPARATION PROCESSES
SILICIDES
SILICON COMPOUNDS
SORPTION
SPECTROSCOPY
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
THIN FILMS
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Amorphous silicon-germanium alloys (a-Si{sub 1{minus}x}Ge{sub x}:H,F) have been deposited by glow-discharge decomposition of silicon tetrafluoride (SiF{sub 4}) and germane (GeH{sub 4}) in mixture with hydrogen. The effect of total RF power and deposition temperature on the characteristics of the gas phase and the grown material has been evaluated. Also, the effect of the dopant addition has been studied by adding PH{sub 3} and B{sub 2}H{sub 6} to the feeding mixture. The gas-phase characterization has been performed with optical emission spectroscopy (OES) for the analysis of the emitting species, mass spectrometry (MS) for the analysis of the stable species, and Langmuir electrical probes (LEP) for the evaluation of electron density (n{sub e}) and temperature (kT{sub e}). The deposition rate has been measured in-situ by laser interferometry (LI). The deposited films have been analyzed with IR and VIS absorption spectroscopy and with X-ray microanalysis for the measurement of the chemical composition and optical properties.
ISSN:0093-3813
1939-9375
DOI:10.1109/27.61506