X-ray radiation damage and a reliability study on bipolar devices

The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x-ray radiation in the range of 1–2 keV. The device...

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Bibliographic Details
Published in:Applied physics letters 1991-06, Vol.58 (23), p.2687-2689
Main Authors: BOYNE, D, HSIA, L, WACHNIK, R, DECKER, R, WASIK, C
Format: Article
Language:English
Subjects:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
AMPLIFICATION
ANNEALING
Applied sciences
ELECTROMAGNETIC RADIATION
Electronics
ENGINEERING
Exact sciences and technology
GAIN
HEAT TREATMENTS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
IONIZING RADIATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TRANSISTORS
X RADIATION
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Summary:The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x-ray radiation in the range of 1–2 keV. The device parameters were measured before and after irradiation, and were measured again after the devices were annealed. Finally, the devices underwent a reliability test. The study shows that x-ray radiation degrades the common emitter current gain. Upon annealing, the current gain recovers its initial value. Furthermore, the current gain exhibits the same degree of reliability as observed on nonirradiated devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104808