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X-ray radiation damage and a reliability study on bipolar devices

The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x-ray radiation in the range of 1–2 keV. The device...

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Published in:	Applied physics letters 1991-06, Vol.58 (23), p.2687-2689
Main Authors:	BOYNE, D, HSIA, L, WACHNIK, R, DECKER, R, WASIK, C
Format:	Article
Language:	English
Subjects:	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems AMPLIFICATION ANNEALING Applied sciences ELECTROMAGNETIC RADIATION Electronics ENGINEERING Exact sciences and technology GAIN HEAT TREATMENTS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY IONIZING RADIATIONS PHYSICAL RADIATION EFFECTS RADIATION EFFECTS RADIATIONS RELIABILITY SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TRANSISTORS X RADIATION
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cited_by	cdi_FETCH-LOGICAL-c317t-ca7232e8a3827f75136c0790d0176c1fdc4d2687add9c67f2a447d5ff23703c63
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container_issue	23
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container_title	Applied physics letters
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creator	BOYNE, D HSIA, L WACHNIK, R DECKER, R WASIK, C
description	The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x-ray radiation in the range of 1–2 keV. The device parameters were measured before and after irradiation, and were measured again after the devices were annealed. Finally, the devices underwent a reliability test. The study shows that x-ray radiation degrades the common emitter current gain. Upon annealing, the current gain recovers its initial value. Furthermore, the current gain exhibits the same degree of reliability as observed on nonirradiated devices.
doi_str_mv	10.1063/1.104808
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Solid state devices</topic><topic>TRANSISTORS</topic><topic>X RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOYNE, D</creatorcontrib><creatorcontrib>HSIA, L</creatorcontrib><creatorcontrib>WACHNIK, R</creatorcontrib><creatorcontrib>DECKER, R</creatorcontrib><creatorcontrib>WASIK, C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BOYNE, D</au><au>HSIA, L</au><au>WACHNIK, R</au><au>DECKER, R</au><au>WASIK, C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray radiation damage and a reliability study on bipolar devices</atitle><jtitle>Applied physics letters</jtitle><date>1991-06-10</date><risdate>1991</risdate><volume>58</volume><issue>23</issue><spage>2687</spage><epage>2689</epage><pages>2687-2689</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x-ray radiation in the range of 1–2 keV. The device parameters were measured before and after irradiation, and were measured again after the devices were annealed. Finally, the devices underwent a reliability test. The study shows that x-ray radiation degrades the common emitter current gain. Upon annealing, the current gain recovers its initial value. Furthermore, the current gain exhibits the same degree of reliability as observed on nonirradiated devices.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.104808</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
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ispartof	Applied physics letters, 1991-06, Vol.58 (23), p.2687-2689
issn	0003-6951 1077-3118
language	eng
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source	AIP Digital Archive
subjects	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems AMPLIFICATION ANNEALING Applied sciences ELECTROMAGNETIC RADIATION Electronics ENGINEERING Exact sciences and technology GAIN HEAT TREATMENTS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY IONIZING RADIATIONS PHYSICAL RADIATION EFFECTS RADIATION EFFECTS RADIATIONS RELIABILITY SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TRANSISTORS X RADIATION
title	X-ray radiation damage and a reliability study on bipolar devices
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