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Characterization of Mo/B4C multilayers

The Mo/B4C multilayer system is selected for maximum, normal incidence reflection of 6.7nm x-rays. Application in projection lithography requires structural optimization for smooth layering and minimal interface roughness. A transmission electron microscopy analysis of samples prepared in cross-sect...

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Bibliographic Details
Main Authors: Jankowski, A. F., Perry, P. L.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:The Mo/B4C multilayer system is selected for maximum, normal incidence reflection of 6.7nm x-rays. Application in projection lithography requires structural optimization for smooth layering and minimal interface roughness. A transmission electron microscopy analysis of samples prepared in cross-section reveals an intrinsic layer roughness despite attempts to refine sputter deposition parameters. The limitations in growth morphology are attributable to interfacial reactivity from inherent phase instability.
ISSN:0040-6090
1879-2731