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Characterization of Mo/B4C multilayers
The Mo/B4C multilayer system is selected for maximum, normal incidence reflection of 6.7nm x-rays. Application in projection lithography requires structural optimization for smooth layering and minimal interface roughness. A transmission electron microscopy analysis of samples prepared in cross-sect...
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Main Authors: | , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The Mo/B4C multilayer system is selected for maximum, normal incidence reflection of 6.7nm x-rays. Application in projection lithography requires structural optimization for smooth layering and minimal interface roughness. A transmission electron microscopy analysis of samples prepared in cross-section reveals an intrinsic layer roughness despite attempts to refine sputter deposition parameters. The limitations in growth morphology are attributable to interfacial reactivity from inherent phase instability. |
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ISSN: | 0040-6090 1879-2731 |