Simulation fidelity issues when using gamma-ray simulators for TREE testing (Transient Radiation Effects on Electronics)

Factors that influence the fidelity of gamma-ray TREE testing are investigated. Specifically, package-induced dose enhancement in 256K CMOS static-random-access-memories (SRAMs) and dose enhancement from finite- range electrons produced (by gamma-ray interactions) in materials external to the SRAM p...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1990-12, Vol.37, p.1756-1761
Main Authors: Hartman, E F, Browning, J S, Drumm, C R
Format: Article
Language:English
Subjects:
440100 - Radiation Instrumentation
ANALOG SYSTEMS
DOSE RATES
DOSIMETRY
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
FUNCTIONAL MODELS
GAMMA DOSIMETRY
GAMMA RADIATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTERACTIONS
IONIZING RADIATIONS
LEPTONS
LOW TEMPERATURE
PLANTS
RADIATIONS
SENSITIVITY
SIMULATION
SIMULATORS
TESTING
TREES
USES
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Summary:Factors that influence the fidelity of gamma-ray TREE testing are investigated. Specifically, package-induced dose enhancement in 256K CMOS static-random-access-memories (SRAMs) and dose enhancement from finite- range electrons produced (by gamma-ray interactions) in materials external to the SRAM packages are studied. Two gamma-ray simulators with significantly different spectra are used in the studies. The spectral differences produced less change in SRAM upset levels than did surrounding materials of equal mass density but differing atomic number. The implication for gamma-ray simulation testing is that individual devices within electronic systems may respond quite differently in gamma-ray TREE testing because of the structural materials within the system than when tests are performed on these individual devices without the system present. (I.E.)
ISSN:0018-9499
1558-1578
DOI:10.1109/23.101188