Electron tunneling into 1-2-3 HTSC thin films

Detailed tunneling measurements on thin-film planar tunnel junctions of the type RE/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7//native oxide/Pb (RE=Y, Eu, or Gd) are reported. The films were sputter deposited and chemically etched prior to the growth of the native oxide. The structural content of the gaplike s...

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Bibliographic Details
Published in:IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.3085-3089
Main Authors: Geerk, J., Wang, R.-L., Li, H.-C., Linker, G., Meyer, O., Ratzel, F., Smithey, R., Keschtkar, H.
Format: Article
Language:English
Subjects:
ALKALINE EARTH METAL COMPOUNDS
Alloying
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
Chemicals
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Condensed matter: electronic structure, electrical, magnetic, and optical properties
COPPER COMPOUNDS
COPPER OXIDES
Density measurement
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
Electrons
EUROPIUM COMPOUNDS
EUROPIUM OXIDES
Exact sciences and technology
GADOLINIUM COMPOUNDS
GADOLINIUM OXIDES
JUNCTIONS
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PARTICLE MOBILITY
PHASE SHIFT
PHYSICAL PROPERTIES
Physics
RARE EARTH COMPOUNDS
Sputter etching
SPUTTERING
SUPERCONDUCTING FILMS
Superconducting films and low-dimensional structures
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TEMPERATURE DEPENDENCE
Temperature measurement
Transistors
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT
Tunneling
YTTRIUM COMPOUNDS 665412 > Superconducting Devices-- (1992-)
YTTRIUM OXIDES
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Summary:Detailed tunneling measurements on thin-film planar tunnel junctions of the type RE/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7//native oxide/Pb (RE=Y, Eu, or Gd) are reported. The films were sputter deposited and chemically etched prior to the growth of the native oxide. The structural content of the gaplike structure in the I-V characteristic was investigated by taking dI/dV and d/sup 3/I/dV/sup 3/ traces. By analysis of the temperature dependence and temperature smearing, strong arguments could be provided for the fact that all the structures between +or-50 mV measured at low temperature are due to density of states effects. On junctions prepared on 1-2-3 films with T/sub c/ depressed either by partial oxygen depletion or by alloying, it is found that the gaplike structure was weakened, but did not shift on the energy scale.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.133864