Hydrogen dynamics in a-Si :H : multiple trapping, structural relaxation, and the Meyer-Neldel relation

The power-law time-dependent diffusion constant {ital D}({ital t})={ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}} was measured in undoped hydrogenated amorphous silicon of varying H content (H{sub {ital t}}), diffusion length {ital L}, and microvoid content at temperatures {ital T}{le}400 {de...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1991-01, Vol.43 (2), p.1631-1636
Main Authors: SHINAR, J, SHINAR, R, WU, X.-L, MITRA, S, GIRVAN, R. F
Format: Article
Language:English
Subjects:
360603 - Materials- Properties
ACTIVATION ENERGY
AMORPHOUS STATE
ATOM TRANSPORT
Condensed matter: structure, mechanical and thermal properties
DIFFUSION
Diffusion in solids
Diffusion of impurities
DYNAMICS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
Exact sciences and technology
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INFRARED RADIATION
LAYERS
MATERIALS SCIENCE
MECHANICS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
Physics
RADIATION TRANSPORT
RADIATIONS
RELAXATION
SILANES
SILICON COMPOUNDS
TIME DEPENDENCE
Transport properties of condensed matter (nonelectronic)
TRAPPING
VOIDS
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Summary:The power-law time-dependent diffusion constant {ital D}({ital t})={ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}} was measured in undoped hydrogenated amorphous silicon of varying H content (H{sub {ital t}}), diffusion length {ital L}, and microvoid content at temperatures {ital T}{le}400 {degree}C. {alpha} generally deviates from a 1{minus}{ital T}/{ital T}{sub 0} dependence on the temperature {ital T}. The temperature dependence of {ital D}({ital t}{sub {ital L}}), for constant {ital L}, thus deviates from an Arrhenius behavior. The apparent'' activation energy {ital E}{sub {ital a}} and prefactor {ital D}{sub 0}, defined by the linear best fit of ln{ital D}({ital t}{sub {ital L}}) versus 1/{ital T}, strongly increase with {ital L} at low (H{sub {ital t}}). The Meyer-Neldel relation {ital D}{sub 0} ={ital A}{sub 00} exp({ital E}{sub {ital a}}/{ital kT}{sub 0}{sup {prime}}), where {ital A}{sub 00}{congruent}3.1{times}10{sup {minus}14} cm{sup 2}/s and {ital T}{sub 0}{sup {prime}}{congruent}30 K, holds for all 1.3{le}{ital E}{sub {ital a}}{le}2.4 eV and 2.5{times}10{sup {minus}5}{le}{ital D}{sub 0}{le}3100 cm{sup 2}/s. Structural relaxation processes dependent on H content are believed to affect {alpha}. The nature of the microvoid-related deep H-trapping sites is also discussed.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.43.1631