Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures

The deposition of silicon (Si) from silane (SiH[sub 4]) was studied in the silane pressure range from 0.5 to 100 Pa (0.005 to 1 mbar) and total pressure range from 10 to 1,000 Pa using N[sub 2] or He as carrier gases. The two reaction paths, namely, heterogeneous and homogeneous decomposition could...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1993-07, Vol.140 (7), p.2089-2097
Main Authors: Holleman, Jisk, Verweij, Jan F.
Format: Article
Language:English
Subjects:
360101 - Metals & Alloys- Preparation & Fabrication
ADSORPTION
ADSORPTION ISOTHERMS
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DECOMPOSITION
DEPOSITION
DESORPTION
ELEMENTS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
ISOTHERMS
KINETICS
MATERIALS SCIENCE
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOSPHINES
PHOSPHORUS COMPOUNDS
POLYCRYSTALS
PRESSURE DEPENDENCE
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SORPTION
SURFACE COATING
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Description
Summary:The deposition of silicon (Si) from silane (SiH[sub 4]) was studied in the silane pressure range from 0.5 to 100 Pa (0.005 to 1 mbar) and total pressure range from 10 to 1,000 Pa using N[sub 2] or He as carrier gases. The two reaction paths, namely, heterogeneous and homogeneous decomposition could be separated by varying the amount of wafer area per unit volume (wafer-distance variation) and the SiH[sub 4] partial pressure as well as the total pressure. Rate constants were derived by fitting the experimental results. The heterogeneous reaction path could be described by only the adsorption rate constants of reactive species and the desorption rate constant of hydrogen using a Langmuir-Hinshelwood mechanism. Hydrogen and phosphine were found to suppress the deposition rate at low silane pressures. At high silane pressures or high total pressures the unimolecular decomposition of silane dominates. The unimolecular rate constant was found to be one to two orders larger than literature values based on RRKM analyses of high pressure rate data. The relative efficiency of SiH[sub 4]-N[sub 2] and SiH[sub 4]-He collisions compared with SiH[sub 4]-SiH[sub 4] collisions in the unimolecular gas-phase decomposition of SiH[sub 4] has been investigated. Helium was found to be a weak collider compared to silane and nitrogen.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2220770