Evidence for structural relaxation in measurements of hydrogen diffusion in rf-sputtered boron-doped a-Si : H

H diffusion in boron-doped rf-sputter-deposited hydrogenated amorphous Si ({ital a}-Si:H) was measured by secondary ion mass spectrometry profiles of deuterium in annealed {ital a}-Si:H/{ital a}-Si:(H,D)/{ital a}-Si:H multilayers. The exponent {alpha}=0.7{plus minus}0.1 of the diffusion constant {it...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1990-10, Vol.42 (10), p.6746-6749
Main Authors: MITRA, S, SHINAR, R, SHINAR, J
Format: Article
Language:English
Subjects:
360603 - Materials- Properties
ALLOYS
AMORPHOUS STATE
ANNEALING
ATOM TRANSPORT
BORON ADDITIONS
BORON ALLOYS
Condensed matter: structure, mechanical and thermal properties
CRYSTAL STRUCTURE
DIFFUSION
Diffusion in solids
ELEMENTS
Exact sciences and technology
HEAT TREATMENTS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
MATERIALS SCIENCE
MICROSTRUCTURE
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
Physics
RADIATION TRANSPORT
RELAXATION
Self-diffusion and ionic conduction in nonmetals
SILANES
SILICON COMPOUNDS
SPUTTERING
Transport properties of condensed matter (nonelectronic)
VOIDS
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Description
Summary:H diffusion in boron-doped rf-sputter-deposited hydrogenated amorphous Si ({ital a}-Si:H) was measured by secondary ion mass spectrometry profiles of deuterium in annealed {ital a}-Si:H/{ital a}-Si:(H,D)/{ital a}-Si:H multilayers. The exponent {alpha}=0.7{plus minus}0.1 of the diffusion constant {ital D}({ital t}) ={ital D}{sub 00}({omega}{ital t}){sup {minus}{alpha}} strongly decreases after annealing for {approximately}50 h at 180 {degree}C and {approximately}35 h at 225 {degree}C. It then increases to {approximately}0.8--1, i.e., the diffusion is nearly quenched, at longer annealing periods extending up to 1100 h. This behavior is believed to result from modifications in the microvoid system related to structural relaxation of the Si network.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.42.6746