Drift leakage current in AlGaInP quantum-well lasers

The temperature dependence of threshold current and quantum efficiency for Ga/sub x/In/sub 1-x/P (x=0.4, 0.6; lambda =680, 633 nm) single 80-AA quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describin...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1993-05, Vol.29 (5), p.1337-1343
Main Authors: Bour, D.P., Treat, D.W., Thornton, R.L., Geels, R.S., Welch, D.F.
Format: Article
Language:English
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
Carrier confinement
COMPARATIVE EVALUATIONS
CURRENTS
DH-HEMTs
EFFICIENCY
ELECTRIC CURRENTS
Electrons
ENGINEERING
EVALUATION
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LEAKAGE CURRENT
MATERIALS
MATHEMATICAL MODELS
Optics
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
Photonic band gap
Physics
PNICTIDES
QUANTUM EFFICIENCY
Quantum well lasers
Radiative recombination
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
TEMPERATURE DEPENDENCE
Temperature sensors
THRESHOLD CURRENT
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Summary:The temperature dependence of threshold current and quantum efficiency for Ga/sub x/In/sub 1-x/P (x=0.4, 0.6; lambda =680, 633 nm) single 80-AA quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describing the rapid increase in threshold and drop in quantum efficiency as temperature increases. Also, it indicates that the drift (rather than diffusion) component of the electron leakage current, is dominant, because of the poor p-type conductivity in AlGaInP.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.236147