Divacancy acceptor levels in ion-irradiated silicon

High-purity {ital n}-type silicon samples have been irradiated with mega-electron-volt ions ({sup 1}H{sup +}, {sup 4}He{sup 2+}, {sup 16}O{sup 4+}, {sup 32}S{sup 7+}, {sup 79}Br{sup 8+}, and {sup 127}I{sup 10+}), and the two divacancy-related acceptor levels {similar to}0.23 and {similar to}0.42 eV...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1991-01, Vol.43 (3), p.2292-2298
Main Authors: SVENSSON, B. G, MOHADJERI, B, HALLEN, A, SVENSSON, J. H, CORBETT, J. W
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
BROMINE IONS
CATIONS
CHARGED PARTICLES
COLLISIONS
COLOR CENTERS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
E CENTERS
Electron states
ELEMENTS
ENERGY LEVELS
ENERGY RANGE
Exact sciences and technology
HELIUM IONS
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
Impurity and defect levels
IODINE IONS
ION COLLISIONS
IONS
MATERIALS SCIENCE
MEV RANGE
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
Physics
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTROSCOPY
SULFUR IONS
VACANCIES
VERY LOW TEMPERATURE
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Summary:High-purity {ital n}-type silicon samples have been irradiated with mega-electron-volt ions ({sup 1}H{sup +}, {sup 4}He{sup 2+}, {sup 16}O{sup 4+}, {sup 32}S{sup 7+}, {sup 79}Br{sup 8+}, and {sup 127}I{sup 10+}), and the two divacancy-related acceptor levels {similar to}0.23 and {similar to}0.42 eV below the conduction band ({ital E}{sub {ital c}}), respectively, have been studied in detail using deep-level transient spectroscopy (DLTS). Depth concentration profiles show identical values for the two levels at shallow depths, while in the region close to the damage peak large deviations from a one-to-one proportionality are found. These deviations increase with ion dose and also hinge strongly on the density of energy deposited into elastic collisions per incoming ion. Evidence for a model of the two levels is presented and, in particular, the model invokes excited states caused by motional averaging and lattice strain associated with damaged regions.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.43.2292