Development of Functional Microstructure during Sintering of a ZnO Varistor Material

The effects of sintering time and rate of cooling on the microstructure and current/voltage characteristics of a ZnO varistor material have been investigated. The results provide information about the development of microstructure during sintering and have been interpreted in terms of the role which...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1993-01, Vol.76 (1), p.65-71
Main Authors: Olsson, Eva, Dunlop, Gordon, Österlund, Ragnar
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
360606 - Other Materials- Physical Properties- (1992-)
ANTIMONY
Applied sciences
BISMUTH COMPOUNDS
BISMUTH OXIDES
Building materials. Ceramics. Glasses
Ceramic industries
CHALCOGENIDES
Chemical industry and chemicals
COBALT
COOLING
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
Electrotechnical and electronic ceramics
ELEMENTS
Exact sciences and technology
FABRICATION
GRAIN BOUNDARIES
MATERIALS SCIENCE
METALS
MICROSTRUCTURE
MINERALS
NICKEL
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POLYCRYSTALS
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR RESISTORS
SINTERING
SPINELS
Technical ceramics
TIME DEPENDENCE
TRANSITION ELEMENTS
ZINC COMPOUNDS
ZINC OXIDES
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Description
Summary:The effects of sintering time and rate of cooling on the microstructure and current/voltage characteristics of a ZnO varistor material have been investigated. The results provide information about the development of microstructure during sintering and have been interpreted in terms of the role which microstructure plays in the determination of electrical properties. A continuous network of intergranular Bi2O3, which lies mainly along the triple junctions between ZnO grains, can give a substantial contribution to the leakage current. The conductivity of this skeleton depends upon its internal microstructure.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1993.tb03690.x