Charge emission from silicon and germanium surfaces irradiated with KrF excimer laser pulses

The authors report time-resolved measurements of the emission of positive and negative charge from Si and Ge surfaces irradiated with 248-nm KrF excimer laser pulses. With pulse energies both below and above the melting threshold, the time evolution of the emission currents is complex and strikingly...

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Bibliographic Details
Published in:Journal of applied physics 1990-11, Vol.68 (9), p.4795-4801
Main Authors: BIALKOWSKI, M. M, HURST, G. S, PARKS, J. E, LOWNDES, D. H, JELLISON, G. E
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
ELECTROMAGNETIC RADIATION
Electron and ion emission by liquids and solids
impact phenomena
ELEMENTS
Exact sciences and technology
GERMANIUM
Impact phenomena (including electron spectra and sputtering)
ION EMISSION
LASER RADIATION
Laser-beam impact phenomena
MASS SPECTROSCOPY
MATERIALS SCIENCE
METALS
NATIONAL ORGANIZATIONS
ORNL
PHYSICAL RADIATION EFFECTS
Physics
RADIATION EFFECTS
RADIATIONS
RESONANCE IONIZATION MASS SPECTROSCOPY
SEMIMETALS
SILICON
SPECTROSCOPY
US AEC
US DOE
US ERDA
US ORGANIZATIONS
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Description
Summary:The authors report time-resolved measurements of the emission of positive and negative charge from Si and Ge surfaces irradiated with 248-nm KrF excimer laser pulses. With pulse energies both below and above the melting threshold, the time evolution of the emission currents is complex and strikingly different for Si and Ge. The positive ion emission signal from Ge persists only for the duration of the laser pulse (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.346136