Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates

GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1990-10, Vol.57:16
Main Authors: Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D., Cho, A.Y.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ENGINEERING
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
MOLECULAR BEAM EPITAXY
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-)
THRESHOLD CURRENT
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20--50% less on an average for VCSELs grown on the 4{degree} off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al{sub 0.1}Ga{sub 0.9}As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm{sup 2} were measured with an emission efficiency of 0.2 mW/mA.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104086