Chemistry and Structure of Beta Silicon Carbide Implanted with High-Dose Aluminum

Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 1017 ions/cm2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmis...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1993-02, Vol.76 (2), p.330-335
Main Authors: Du, Honghua, Yang, Zunde, Libera, Matthew, Jacobson, Dale C., Wang, Yu C., Davis, Robert F.
Format: Article
Language:English
Subjects:
360206 - Ceramics, Cermets, & Refractories- Radiation Effects
ACCELERATORS
ALUMINIUM CARBIDES
ALUMINIUM COMPOUNDS
AUGER ELECTRON SPECTROSCOPY
BACKSCATTERING
BINDING ENERGY
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTROSTATIC ACCELERATORS
ENERGY
ION IMPLANTATION
MATERIALS SCIENCE
MICROSCOPY
MONOCRYSTALS
PHOTOELECTRON SPECTROSCOPY
PRECIPITATION
RUTHERFORD SCATTERING
SCATTERING
SEPARATION PROCESSES
SILICON CARBIDES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE COATING
TANDEM ELECTROSTATIC ACCELERATORS
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY
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Description
Summary:Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 1017 ions/cm2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1993.tb03787.x