Half-ring geometry quantum well GaAlAs lasers

Half-ring geometry single quantum well GaAlAs lasers have been fabricated. These lasers rely on a single cleave to obtain both resonator end reflectors. Using a buried-heterostructure waveguide for lateral confinement and a high reflectivity facet coating, threshold currents as low as 14.5 mA and a...

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Bibliographic Details
Published in:Applied physics letters 1990-09, Vol.57 (10), p.966-967
Main Authors: BAR-CHAIM, N, LAU, K. Y, MAZED, M. A, MITTELSTEIN, M, OH, S, UNGAR, J. E, URY, I
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
DESIGN
ELECTRIC CURRENTS
ENGINEERING
Exact sciences and technology
FABRICATION
FIBERS
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
MODULATION
OPTICAL FIBERS
Optics
Physics
PNICTIDES
REFLECTIVE COATINGS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-)
SUPERLATTICES
THRESHOLD CURRENT
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Summary:Half-ring geometry single quantum well GaAlAs lasers have been fabricated. These lasers rely on a single cleave to obtain both resonator end reflectors. Using a buried-heterostructure waveguide for lateral confinement and a high reflectivity facet coating, threshold currents as low as 14.5 mA and a frequency response extending to 6.5 GHz have been achieved.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103527