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Half-ring geometry quantum well GaAlAs lasers
Half-ring geometry single quantum well GaAlAs lasers have been fabricated. These lasers rely on a single cleave to obtain both resonator end reflectors. Using a buried-heterostructure waveguide for lateral confinement and a high reflectivity facet coating, threshold currents as low as 14.5 mA and a...
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| Published in: | Applied physics letters 1990-09, Vol.57 (10), p.966-967 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c313t-e8598b66cde1a9958ce383c92b0c6d4fd0705b0cb5802c1b2445ad4ed2b775b43 |
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| cites | cdi_FETCH-LOGICAL-c313t-e8598b66cde1a9958ce383c92b0c6d4fd0705b0cb5802c1b2445ad4ed2b775b43 |
| container_end_page | 967 |
| container_issue | 10 |
| container_start_page | 966 |
| container_title | Applied physics letters |
| container_volume | 57 |
| creator | BAR-CHAIM, N LAU, K. Y MAZED, M. A MITTELSTEIN, M OH, S UNGAR, J. E URY, I |
| description | Half-ring geometry single quantum well GaAlAs lasers have been fabricated. These lasers rely on a single cleave to obtain both resonator end reflectors. Using a buried-heterostructure waveguide for lateral confinement and a high reflectivity facet coating, threshold currents as low as 14.5 mA and a frequency response extending to 6.5 GHz have been achieved. |
| doi_str_mv | 10.1063/1.103527 |
| format | article |
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E</au><au>URY, I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Half-ring geometry quantum well GaAlAs lasers</atitle><jtitle>Applied physics letters</jtitle><date>1990-09-03</date><risdate>1990</risdate><volume>57</volume><issue>10</issue><spage>966</spage><epage>967</epage><pages>966-967</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Half-ring geometry single quantum well GaAlAs lasers have been fabricated. These lasers rely on a single cleave to obtain both resonator end reflectors. Using a buried-heterostructure waveguide for lateral confinement and a high reflectivity facet coating, threshold currents as low as 14.5 mA and a frequency response extending to 6.5 GHz have been achieved.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.103527</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1990-09, Vol.57 (10), p.966-967 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_6376670 |
| source | AIP Digital Archive |
| subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES COATINGS CURRENTS DESIGN ELECTRIC CURRENTS ENGINEERING Exact sciences and technology FABRICATION FIBERS Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS LASER CAVITIES LASERS MODULATION OPTICAL FIBERS Optics Physics PNICTIDES REFLECTIVE COATINGS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SOLID STATE LASERS 426002 -- Engineering-- Lasers & Masers-- (1990-) SUPERLATTICES THRESHOLD CURRENT |
| title | Half-ring geometry quantum well GaAlAs lasers |
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