Model for the Formation of Silicon Carbide from the Pyrolysis of Dichlorodimethylsilane in Hydrogen: II, Silicon Carbide Formation from Silicon and Methane

A model is developed for the deposition of silicon carbide from the pyrolysis of dichlorodimethylsiane in hydrogen, in a tubular reactor at temperatures from 700° to 1100°C and 1.013 × 105 Pa (1 atm) pressure. Concentration of dichlorodimethylsilane varied from 2 to 8 vol%. Gas chromatography was us...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1993-01, Vol.76 (1), p.49-53
Main Authors: Cagliostro, Domenick E., Riccitiello, Salvatore R.
Format: Article
Language:English
Subjects:
360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication
400201 - Chemical & Physicochemical Properties
ALKANES
Applied sciences
Building materials. Ceramics. Glasses
CARBIDES
CARBON COMPOUNDS
Ceramic industries
CHEMICAL ANALYSIS
CHEMICAL COATING
Chemical industry and chemicals
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CHROMATOGRAPHY
DATA
DECOMPOSITION
DEPOSITION
ELEMENTS
Exact sciences and technology
EXPERIMENTAL DATA
GAS CHROMATOGRAPHY
GRAVIMETRIC ANALYSIS
HYDRIDES
HYDROCARBONS
HYDROGEN
HYDROGEN COMPOUNDS
INFORMATION
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
MATERIALS SCIENCE
MATHEMATICAL MODELS
MATHEMATICS
METHANE
Miscellaneous
NONLINEAR PROBLEMS
NONMETALS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PYROLYSIS
QUANTITATIVE CHEMICAL ANALYSIS
REGRESSION ANALYSIS
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
STATISTICS
SURFACE COATING
SYNTHESIS
Technical ceramics
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THERMOCHEMICAL PROCESSES
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Description
Summary:A model is developed for the deposition of silicon carbide from the pyrolysis of dichlorodimethylsiane in hydrogen, in a tubular reactor at temperatures from 700° to 1100°C and 1.013 × 105 Pa (1 atm) pressure. Concentration of dichlorodimethylsilane varied from 2 to 8 vol%. Gas chromatography was used to determine the volatile products of reaction, and gravimetric analysis was used to determine the total silicon and silicon carbide deposition on the tube. The model developed based on the experimental data that assumes the following chemical reactions: The rate constants derived from a nonlinear regression analysis are reported.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1993.tb03688.x