Experimental results and modeling techniques for substrate noise in mixed-signal integrated circuits

An experimental technique is described for observing the effects of switching transients in digital MOS circuits that perturb analog circuits integrated on the same die by means of coupling through the substrate. Various approaches to reducing substrate crosstalk (the use of physical separation of a...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1993-04, Vol.28 (4), p.420-430
Main Authors: Su, D.K., Loinaz, M.J., Masui, S., Wooley, B.A.
Format: Article
Language:English
Subjects:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
Analog circuits
ANALOG SYSTEMS
Circuit simulation
CMOS digital integrated circuits
CMOS technology
Coupling circuits
Crosstalk
DATA
Digital circuits
DIGITAL SYSTEMS
DOPED MATERIALS
ELECTRONIC CIRCUITS
ENGINEERING
EPITAXY
FABRICATION
INFORMATION
Integrated circuit technology
INTEGRATED CIRCUITS
MATERIALS
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
NOISE
SEMICONDUCTOR DEVICES
SUBSTRATES
Switching circuits
TRANSIENTS
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Summary:An experimental technique is described for observing the effects of switching transients in digital MOS circuits that perturb analog circuits integrated on the same die by means of coupling through the substrate. Various approaches to reducing substrate crosstalk (the use of physical separation of analog and digital circuits, guard rings, and a low-inductance substrate bias) are evaluated experimentally for a CMOS technology with a substrate comprising an epitaxial layer grown on a heavily doped bulk wafer. Observations indicate that reducing the inductance in the substrate bias is the most effective. Device simulations are used to show how crosstalk propagates via the heavily doped bulk and to predict the nature of substrate crosstalk in CMOS technologies integrated in uniform, lightly doped bulk substrates, showing that in such cases the substrate noise is highly dependent on layout geometry. A method of including substrate effects in SPICE simulations for circuits fabricated on epitaxial, heavily doped substrates is developed.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.210024